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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS10KM-10A FS10KM-10A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS10KM-10A
OUTLINE DRAWING
10 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
3 0.3
0.75 0.15
2.54 0.25
2.54 0.25

2.6 0.2
G 10V DRIVE G VDSS ............................................................................... 500V G rDS (ON) (MAX) .............................................................. 0.90 G ID ......................................................................................... 10A
GATE DRAIN SOURCE
TO-220FN
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200H VGS = 0V VDS = 0V
Conditions
Ratings 500 30 10 30 10 35 -55 ~ +150 -55 ~ +150
4.5 0.2
Unit V V A A A W C C V g Sep. 2001
AC for 1minute, Terminal to case Typical value
2000 2.0
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2.5 -- -- 4.8 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.70 3.5 8.0 1100 110 25 20 30 140 40 1.5 -- Max. -- -- 10 1 3.5 0.90 4.5 -- -- -- -- -- -- -- -- 2.0 3.57
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA
7 5 3 2
POWER DISSIPATION PD (W)
40
DRAIN CURRENT ID (A)
101
7 5 3 2 7 5 3 2
tw = 10s 100s 1ms TC = 25C Single Pulse
10 ms
30
100
20
10
10-1
7 5 3 2
DC 23 5 7 101 23 5 7 102 23 57
0
0
50
100
150
200
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V,10V,8V 6V
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V,10V,6V
DRAIN CURRENT ID (A)
16
PD = 35W
DRAIN CURRENT ID (A)
TC = 25C Pulse Test
8
TC = 25C Pulse Test 5V
12
5V
6
8
4
PD = 35W
4
4V
2
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
32
1.6
24
ID = 15A
1.2
VGS = 10V VGS = 20V
16
0.8
8
10A
0.4
TC = 25C Pulse Test
0
5A
0
4
8
12
16
20
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20 102
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
101
7 5 3 2
TC = 25C,75C,125C
12
8
100
7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101
4
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
10-1 -1 10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
104 7 5 5 3
SWITCHING CHARACTERISTICS (TYPICAL)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 103 7 5 3 2 102 7 5 3 2 101 TCh = 25C VGS = 0V f = 1MHZ
2
td(off)
Ciss
102
7 5 3 2 tr tf
td(on) TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 101
Coss
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
101 7 5
10-1
2
3
5 7 100
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
SOURCE CURRENT IS (A)
TC = 25C
20
VDS = 100V 200V
16
32
75C 125C
12
400V
24
8
16
4
TCh = 25C ID = 10A
8
VGS = 0V Pulse Test
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 5A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 D = 1.0 3 = 0.5 2
1.2
100 = 0.2
7 5 = 0.1 3 = 0.05 2 = 0.02
1.0
0.8
PDM = 0.01
tw T D= tw T
10-1
7 5 3 2 Single Pulse
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001

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